Analytical and Computer-Aided Models of InP-Based MISFETs and Heterojunction Devices.

摘要

The superior properties of InP material, c.g., higher peak electron drift velocity, thermal conductivity, and breakdown field, to GaAs have made it an attractive alternative for high performance applications in microwave and millimeter-wave regimes as well as high-speed digital circuits. Recently, a high-efficiency InP MISFET has demonstrated 4.5 watts output power with 4 dB gain and 46% power-added efficiency at 9.7 GHz by Messick et al. These impressive results clearly confirmed the promising superior performance of InP MISFETs. The main concern in the applications of III-V MISFETs has been the reliability of output characteristics of the devices, which is mainly attributed to the variations of interfacial properties of the gate dielectric layer and the underlying semiconductor active layer. The task of modeling output characteristics of III-V compound-based MISFET devices has become more complex with the possible dominance of the interfacial properties in the devices' performance. Much more attention should be paid to the nonlinear modulation of the surface potential by the external gate voltage due to the presence of an excessive amount of interfacial states, since the accompanying carrier trapping, scattering, and recombination could have altered completely the charge control and transport mechanisms, and consequently the device output characteristics. (RRH)