Raman Spectroscopy Study of Microstructural Geometries in Semiconductors

摘要

We report a program of the study of semiconductor microstructural geometries by Raman scattering (RS). From RS at 300K and photoluminscence at 4K we have deduced information about the alloy potential fluctuations in MBE fabricated Al(0.48)In(0.52)As/InP grown at different substrate temperatures. A comparative study of RS, transmission electron microscopy (TEM) and conductivity has been performed on molecular beam deposited microcrystalline Si and Ge. A detailed analysis of the RS lineshape reveals that it is more sensitive to point defects (impurities) in relation to TEM. Raman spectroscopy, Semiconductor microstructures. (jes)