Assessment of Noise Sources and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors.

摘要

Noise sources, and noise characteristics of modern self-aligned GaAs/AlGaAs HBT (Heterojunction Bipolar Transistors) have been studied as a function of bias and temperature. Strong bias dependence is found for both the collector noise current spectra (SIc(f)), and the basic noise current spectra(SIB(f)). Temperature dependence of the collector noise spectra reveals trap activation energy of about 162 meV.