Growth and Characterization of Zinc Sulfide Films by Conversion of Zinc Oxide Films with H2S.

摘要

Zinc sulfide is an IR window material and a transparent semiconductor with a large direct band gap. It also possesses piezoelectric, photoconductive and electro-luminescent properties. Thin films of zinc sulfide can be utilized for infrared antireflection coatings, light-emitting diodes (LEDs) electro-luminescent (EL) displays, multilayer dielectric filters, optical phase modulation and light guiding in integrated optics. In recent years, there has been a large amount of effort directed at the growth of high quality films of ZnS. Zinc sulfide films were prepared by conversion of zinc oxide films in the presence of hydrogen sulfide. The films which contained both the hexagonal and cubic forms of zinc sulfide were shown to be uniform and gave a measured band gap of 3.65 eV. (AW)