Direct Implantation Process Development and Characterization in Advanced Hg(1)-(x)Cd(x)Te EPI Layers.

摘要

Mercury cadmium telluride (MCT) has been extensively studied over the past thirty years, primarily as an optical detector material for the mid and far infrared. Researchers have also shown interest in other potential uses for the material such as optical communication devices, tunable lasers, and nonlinear optical devices. The properties that make the alloy semiconductor MCT particularly suited for infrared detection an energy gap that can be adjusted from a value of -0.3 electron-volt for the semimetal mercury telluride to electron-volt for cadmium telluride and a direct energy gap over all values of composition. The direct energy gap gives the material a large absorption coefficient which means that the detector needs to be only several microns thick to absorb all the radiation of interest. It thus lends itself readily production-line processing utilizing standard photolithographic techniques. Additional favorable properties include a very high electron mobility, a high electron-to-hole mobility ratio, and a fairly low dielectric constant. Keywords:Hg1-xCdxTe; Ion implantation; Rapid thermal annealing; Rapid thermal annealing; Ion channeling; Rutherford backscattering; Spectrometry; Process modeling; Lasers; Semiconductors. (JG)