HgTe/CdS/ZnS多壳层量子点的制备与表征

摘要

A simple method for HgTe/CdS/ZnS multi-shell quantum dots ( QDs) synthesizing was developed. Firstly, HgTe core QDs were synthesized in aqueous solution with 1-thioglycerol as the stabilizer. Then, CdS and ZnS shells were grown on the surface of HgTe core by epitaxial growth method . The resultant HgTe/CdS/ZnS multi-shell QDs have stable near-infrared light-emitting prop-erty . This synthetic method contains only three steps with the advantages of simple operation and low cost. The experimental results indicate that HgTe/CdS/ZnS multi-shell QDs can reach the highest fluorescence quantum yield of 36% as the reaction solution ( pH=11 . 0 ) is heated reflux for 4 min at 90 ℃.%采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点。首先,以1-硫代甘油为稳定剂,在水相溶液中制备出HgTe核量子点；然后,采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层,合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点。该合成方法仅需3个步骤,具有操作简单、成本低廉的优点。实验结果显示,当反应温度为90℃、反应溶液pH为11.0、反应加热回流时间为4 min时,HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%。