Diffusion Effects in Short-Channel GaAs MESFETs

摘要

Diffusion effects in short-channel GaAs MESFETs are studied using a two-dimensional electron temperature simulation. A structure that consists of two n(+)-n contacts on a thin channel region was used as a test vehicle for the study. This structure was found to have a higher cutoff frequency than conventionally doped devices with the same gate length due to decreased gate capacitance and a selective modulation of the device transconductance. These results suggest that the performance of short-channel microwave MESFETs may be influenced strongly by electron diffusion. Reprints. (rh)