Electromigration in Metallic Microstructures.

摘要

Theoretical studies of electromigration in metallic microstructures have been performed in atomic dynamics and electronic aspects of driving forces. A general formulation of electrical conductivity and electromigration in bulk systems, thin films, and other low-dimensional systems has been constructed. Electromigration driving forces can be calculated from consideration of elastic scattering, although it is the inelastic part of the electron scattering that propels the migrating atom. However, non-adiabatic recoil effects play an important role in the atomic migration of light interstitials at lower temperatures. Model calculations for electromigration at grain boundaries, dislocations and surfaces show substantial variation in driving forces as an interface is approached. This variation is caused by the form of the current distribution near an interface and in multiple scattering resonances between an interface and the impurity. Keywords: Electromigration; Quantum mechanics; Thermomigration; Mesoscopic structures; Crystals. (jes)