III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon.

摘要

For some time interests have been aroused by the III-V quantum well heterostructures (QWHs) and superlattices (SLs) and, in addition to fundamental effects, the special opportunities QWHs and SLs afford in making possible improved forms of lasers, not to mention other devices and optoelectronic systems. In this report, studies have been made of: (1) Al(x)Ga(1-x)As-GaAs lasers on Si, (2) impurity induced layer disordering (which is an especially advantageous phenomenon in QWHs and SLs), (3) phonon-assisted laser operation and its unambiguous identification by control of the cavity Q of QWH samples, (4) the use of cavity Q to fill the recombination spectrum of QWHs, and (5) hydrolization and reliability of Al(x)Ga(1-x)As-GaAs QWHs and SLs, and (6) various other laser problems associated with higher gap crystals such as In(y)(Al(x)Ga(1-x)(1-y)P. Keywords: Lasers; Silicon; Semiconductors. (cp)