Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer

摘要

A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.