Selective Heteroepitaxial Growth of Compound Semiconductors.

摘要

The effect of reduced growth area on the lattice mismatch accommodation of In(x)Ga(1-x)As/GaAs and GaAs/Si grown by molecular beam epitaxy (MBE) has been studied with cross-sectional transmission electron microscopy (XTEM)and cathodoluminescence (CL). Results indicate that the use of step-composition grading and linear-composition grading are particularly effective when combined with reduced growth areas and In(x)Ga(1-x)As compositions up to x = 0.25. Blanket areas with the same composition grading techniques exhibited randomly distributed threading dislocation-free regions approximately 30 micrometers in diameter, which were bounded by high-density dislocation pile-ups. (JS)