Method for selective heteroepitaxial III-V compound growth

摘要

A method of producing a heterostructure device comprises defining in a substrate 5 of group III-V semiconductor material a structure, such as a mesa 9, having first and second faces oriented substantially parallel to the (100) and (111)A crystallographic planes. The mesa 9 is exposed to group III-V chemical reagents thereby to deposit group III-V materials on the first and/or second faces in dependence upon the group V constituent in the chemical reagents.