Metallization of Semiconducting Diamond: Mo, Mo/Au and Mo/Ni/Au. (Reannouncementwith New Availability Information)

摘要

A processing technology has been developed to make ohmic contacts to naturallydoped semiconducting diamond. The approach follows, as far as possible, conventional photolithographic techniques for metallization of semiconductors currently in use in the microelectronic industry. Ohmic contacts have been successfully made to naturally doped semiconducting diamond using evaporated thin films of molybdenum, molybdenum/gold, and molybdenum/nickel/gold. The metal contacts form a tenacious bond with the diamond substrate after annealing. The time and the temperature of annealing also affects the type and the degree of conduction of the contacts. Characterization of the interface of the metal contacts to diamond using AES, SIMS, RBS, XRD, SEM, and metallography clearly indicates that metal-carbide-precipitates nucleate and grow at the diamond/metal interface during annealing. It is concluded that the size and the areal density of the carbide precipitates at the interface are the principal factors that control the adhesion, and the mode and the degree of conductivity of the metal contacts.