Bipolar Transistors in Silicon-on-Sapphire (SOS): Effects of Nanosecond ThermalProcessing

摘要

Nano second thermal processing (NTP) using an XeCl excimer laser was employed inthe fabrication of npn bipolar transistors in SOS. Functional devices, with current gain Beta approaching 100, were obtained. The deleterious effects of diffusion pipes in SOS material were minimized using rapid laser activation of ion implanted dopant.