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Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire
Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire
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机译:在蓝宝石上制造互补垂直双极结型晶体管的方法
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摘要
A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ silicon island by epitaxially growing an N-type silicon layer on the N+ silicon island. Then, a P region is created in the N-type silicon layer. An N+ region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P+ silicon island. Then, an N region is created in the P- type silicon layer. A P+ region created in the N region completes the PNP junction device.
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