Research on Silicon, Carbon, and Silicon Carbide Heterostructures

摘要

This report describes the accomplishments on this program in obtaining anunderstanding of the deposition of Group IV thin films by the remote plasma chemical deposition process (RPCVD). We characterized the deposition process by emission spectroscopy and excited state absorption of resonance radiation by metastable states. We deposited and characterized amorphous Si, C, SiC, and heterostructures of Si and SiC. We related the properties of the deposited films to the process parameters. UHV surface chemistry techniques were developed and applied to the study of fundamental deposition processes. A UHV cryogenic cathodoluminescence facility was developed and used to study crystalline diamond and RPCVD-deposited materials.