Polymer Resist Systems for Advanced Microlithography

摘要

The aim throughout this work has been to produce and characterize resist systemswith enhanced sensitivity, resolution, and etch resistance. New polymers and polymer systems were evaluated as e-beam and x-ray resists using gamma radiation, flood exposure to electrons, synchrotron radiation, and e-beam patterning. The systems investigated have included copolymers and blends. In particular, reactive plasticizers were found to impart high sensitivity to negative-working resists with good resolution. Because of the overwhelming importance of the development step in producing high resolution patterns, dissolution rate measurements were refined and applied to a number of problems. As far as resistance to ion-assisted plasma etching is concerned, our studies have established the importance of conditions including flow rates, power density, pressure, etc.