High-Efficiency High-Power GaInAsSb-AlGaAsSb Double-Heterostructure LasersEmitting at 2.3 micrometers

摘要

High-performance semiconductor diode lasers operating in the 2-5 micrometerspectral range would be very useful for a variety of applications, including optical fiber communication employing low-loss fluoride-based fibers, laser radar exploiting atmospheric transmission windows, remote sensing of atmospheric gases, and molecular spectroscopy. Heterostructures incorporating GaInAsSb active layers and AlGaAsSb cladding layers lattice matched to GaSb substrates are promising candidates for such lasers. The lattice-matched GaInAsSb alloys have room-temperature bandgaps corresponding to wavelengths 1.7 and 4.4 micrometers. AlGaAsSb is chosen for the cladding layers because, unlike GaSb, it has a lower refractive index than GaInAsSb and provides potential barriers high enough to confine both electrons and holes in the GaInAsSb layer.