高功率GaSb基2.6微米InGaAsSb/AlGaAsSb Ⅰ型量子阱室温工作激光器

摘要

成功制备出2.6μm GaSb基Ⅰ型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(M BE)生长出器件的材料结构.为了得到更好的光学质量,将量子阱的生长温度优化至500℃,并将量子阱的压应变调节为1.3％.制备了脊宽100 μm、腔长1.5 mm的激光单管器件.在未镀膜下该激光器实现了最大328 mW室温连续工作,阈值电流密度为402 A/cm2,在脉冲工作模式下,功率达到700 mW.%GaSb-based InGaAsSb/AlGaAsSb type-Ⅰ quantum-wells (QWs) laser diodes have been successfully fabricated.The wavelength is expanded to 2.6 μm with high output power.The device structures were grown by molecular beam epitaxy.Under the optimized QWs growth temperature of 500℃,the compressive strain of the QWs are defined to 1.3％ for better optical quality.With a ridge width of 100μm and cavity length of 1.5 mm,the maximum output power of single facet without coating has reached up to 328 mW under continuous wave (CW) operation at room temperature and 700 mW under pulse condition.The threshold current density is 402 A/cm2.