Cpd. semiconductor quantum well diode laser for operation at specific wavelength esp. 1.3 micron

摘要

The semiconductor optical device includes an active layer (12) having multiple compressively strained quantum wells (54) of AlGaInAs sandwiched between barriers (56) of AlGaInAs. The active layer is surrounded by oppositely doped III-V semiconductor cladding layers to form an optical waveguide. The barrier layers may be lattice-matched to InP. Pref. the quantum-well layer includes Al in an atomic amount that is less than a sum of the atomic amounts of Ga and In e.g. Al0.18Ga0.12In0.70As. The barrier layers may have an electronic bandgap wavelength of between 0.95 and 1.2 mu m e.g. about equal to 1.0 mu m.