Atomic Layer Epitaxy of Advanced Devices and Circuits

摘要

For advanced electron devices, atomic layer epitaxy offers two capabilities whichno other semiconductor growth technique provides: monolayer thickness control and conformal over-growth. Monolayer thickness control was used to ensure lateral and vertical uniformity for devices incorporating quantum wells and tunnel barriers, e.g. resonant tunneling diodes/over large area substrates. Conformal overgrowth was used for device passivation and in quantum well structures embedded in groves under sidewalls ALE was also used and showed definite advantages over other growth techniques in several other areas such as planar and carbon doping, high quality interfaces and selective area epitaxy. During the last three years we have addressed the major challenges facing the ALE technique, improved the material quality for both binary and ternary alloy III-V compounds and then applied the ALE technique to several device structures, such as Resonant tunneling diodes, planar doped FETs and Bipolar junction transistors.