Monolithic Integration of a DFB Superlattice Laser Using High Energy IonImplantation

摘要

The objective of this research is to develop the use of high energy (MeV) andmedium energy (keV) ion beams for the purpose of selectively modifying the optical properties of superlattice systems consisting of mixed III-V compound semiconductors. In particular, the research was directed at the AlGaAs/GaAs multilayer superlattice system and its potential use in fabricating a monolithically integrated distributed feedback laser for use in optoelectronic circuits. The optical properties of such semiconductor superlattice systems have been shown to be sensitive to ion bombardment and its associated implantation and mixing process. The use of ion beams makes it possible to modify these structures through selective masking so that optical elements such as lasers, waveguides, and switches could be fabricated under the constraints imposed by monolithic integration. In particular, investigations were made into the effects of implantation controlled disordering of AlGaAs and GaAs through impurity, defect, and ion beam mixing effects. The results of this work were applied to the development and fabrication of an ion implanted distributed feedback (DFB) type laser in a multilayer superlattice system.