Quantum 1/f Noise in High Technology Applications Including Ultrasmall Structuresand Devices

摘要

The practical application of the quantum 1/f effect to quartz resonators and toinfrared detectors present in this report allows us for the first time to understand and to extend the stability limits of quartz resonators. It also explains 1/f noise in most semiconductor devices and in infrared detectors considered in this report in the presence of radiation, although 1/f noise has been already successfully pushed below background in PtSi on p-type Si Schottky diodes at RADC-Hanscomb. A fundamental breakthrough was performed through the first direct derivation of the coherent quantum 1/f effect from a special quantum-electrodynamic propagator, and from the author's general sufficient 1/f chaos criterion presented in the previous yearly report. Finally, the quantum 1/f cross-correlations derived by the author have been used to recalculate and to graph the quantum 1/f mobility fluctuations in Si and gallium arsenide samples as a function of temperature and doping, in good agreement with the measurements of Tacano in Japan and Hooge in the Netherlands. Quantum 1/f Noise Theory and Applications, 1/f Noise, Electronic Noise in Semiconductor Devices, Quantum 1/f Effect, Quartz Resonators, Noise in Ultrasmall Devices, Chaos, Nonlinear Dynamics.