Ensemble Monte Carlo Simulation of Intervalley Scattering in A1xGa1-xAs

摘要

An ensemble Monte Carlo simulation of the femtosecond response of photoexcitedelectrons in indirect AlxGal-xAs is performed. The time evolution of electron populations in the conduction band valleys is studied. By comparing with recent femtosecond infrared-absorption experiments, a value for the L-X intervalley deformation potential was derived through parameter fitting. The effect of binary phonon modes due to the alloy structure of the semiconductor is incorporated into the simulation of both the ultrafast scattering processes and the indirect photogeneration process. 8 The value found for the L-X intervalley deformation potential, DXL=1.7+0.5X10 eV/cm, can be assumed as a lower bound for the deformation potential in GaAs.