Superconducting Flux Coupled Fast Switching Device from YBCO Films.

摘要

Applications of high-temperature superconducting (HTSC) materials, especially thin-film YBaCuO (123), to microelectronic devices have been limited by materials-related fabrication problems. Magnetic-flux-coupled devices are less limited by these problems but have not been widely explored. The innovation for this program was demonstration of a flux-coupled device that was: (1) simple to fabricate, (2) based on silicon substrates, (3) shows excellent flux-flow dynamics, and (4) can be implemented in switching or amplifying circuits. In Phase I we have demonstrated our potential for developing this device utilizing high critical-current YBCO thin films on yttria-stabilized zirconia (YSZ)-buffered Si substrates. Our devices are designed to take advantage of these new materials opportunities, are within realistic materials and fabrication constraints, and are projected to operate from dc to at least 10 GHz. The flux-flow devices (FFD) we have fabricated, include: externally-activated magnetic switch, superconducting transformer, and flux-flow (transistor-like) switch. The use of Si wafers not only allows high-quality quality films on large (or very thin) and inexpensive substrates, but also many design configurations with great potential for wafer-scale, hybrid integration with semiconductor electronics. Thin Film Microelectronics, Superconducting Transistor, Three-Terminal Active Device, Pulsed Laser Ablation-Deposition.