Comparison Study of Diamond Films Grown on Tungsten Carbide Cobalt Tools Insertswith CH(4) and CF(4) Gas Sources

摘要

The results of a comparison study of continuous diamond coatings deposited ontungsten carbide-6% cobalt tool inserts using CF4, and CH4, gas sources are presented. The CH4, grown diamond film utilizes a thin (1200 A) amorphous silicon interlayer for adhesion while the CF4, diamond film is deposited directly onto the tool insert. Diamond films produced with CF4, gas have much higher growth rates and better adhesion than diamond films grown with CH4, gas. The films are characterized by scanning and transmission electron microscopy, and Raman spectroscopy to determine film crystallinity and quality. Macroscopic indentation tests have been conducted to determine the adhesion of the films to the substrate, and an aluminum-17 % Si alloy is machined with the diamond-coated tool inserts to determine their performance in a machining environment. A mechanism for the growth of diamond on tungsten carbide-cobalt using CF4, gas is postulated.