Coupled-Stripe in-Phase Operation of Planar Native-Oxide Index-Guided Al(y)Ga(1-y)As-GaAs-In(x)Ga(1-x)As Quantum-Well Heterostructure Laser Arrays

摘要

High-performance, coupled-stripe, planar, index-guided Al(y)Ga(1-y)As-GaAs-In(x)Ga(1-x)As quantum-well heterostructure (QWH) laser arrays are fabricated by the formation of a relatively thick, current-blocking, native oxide from the high-gap Al(y)Ga(1-y)As upper confining layer between active stripes. Precise control of the thickness of the native oxide layer between emitters provides a means of varying the index step between stripes, and permits tailoring of the optical profile to produce in-phase operation. The 10-stripe coupled QWH laser arrays (approx. 3-micrometer-wide stripes on 4 micrometers centers) exhibit near-diffraction-limited, single-lobed, far-field patterns with low continuous (cw) thresholds (approx. 45 mA) and cw output powers (total external differential quantum efficiency > 50%) of over 100 mW per uncoated facet.