Characterization of InTlSb/InSb Grown by Low Pressure Metalorganic Chemical VaporDeposition on GaAs Substrate

摘要

Optical properties of InTlSb, a new long wavelength infrared material, areinvestigated. InTlSb/InSb epilayers grown by low-pressure metalorganic chemical vapor deposition on semi Ga-As substrates-were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of Thallium. Transmission measurements at 77K indicate an absorption shift from 5.5 um for InSb up to 8 um for InTlSb, which is confirmed by photoconductivity measurements.