Single Crystal Diamond Thin Films

摘要

One possibility for accomplishing growth of single crystal diamond film on anondiamond substrate is based upon ion implantation of carbon atoms into crystalline copper. In spite of widespread interest in the concept, heteroepitaxial diamond growth by this approach has never been confirmed. The objective of this program is to develop specialized ion implantation capabilities for C+ into Cu processing under conditions for which heteroepitaxial formation of diamond on copper may be feasible. A 200 keV medium current ion implantation system has been modified to allow implantations to be performed into substrates at temperatures up to 1000 deg C, to incorporate background atomic hydrogen in the vicinity of the substrate surface during implantation, and to facilitate in-situ CVD diamond growth processing. Apparatus development has been completed and process investigations have been initiated.... Diamond, Copper, Carbon, Ion implantation, Nucleation.