Modeling the Total Dose Radiation Effects of Hg(1-x)Cd(x)Te Photodiodes UsingNumerical Device Simulators

摘要

We fabricated high quality MCT diodes using in-situ grown MCT and selectiveannealing. We used these diodes to benchmark our initial characterization and as a basis for our irradiation modeling. We implemented the models in PISCES-IIB and compared the I-V relationship to measurements. The close match between simulations and measurements demonstrates the applicability of the models. We expanded the simulations to I-V characteristics of irradiated diodes. To do so, we developed models for the induced current mechanisms resulting from radiation interactions. The results confirm the theories concerning the radiation's effect on tunneling in MCT. The simulations also suggest that improvements require knowledge of tunneling currents associated with trap formation in MCT. Radiation effects, MCT, Mercury cadmium telluride, Infrared detectors, Device simulations, Photodiodes.