193nm-Moderately EUV

摘要

Photolithography at 193 nm is a natural continuation of the progression from 436to 365 to 248 nm in lithography, dictated by the requirement for continually higher resolution. It is anticipated that 193-nm lithography will enable 0.25 micrometers patterning and will become the leading volume production technology at 0.18 micrometers. The main issues related to lithography at this new wavelength are being addressed at Lincoln Laboratory. It has been shown that highly transparent optical materials are available at 193 nm. Also, they are damaged by the laser radiation at a slow enough rate that high-quality projection optics are expected to perform within specifications for 10 years of full-time operation. Consequently, a 193-nm step-and-scan system has been constructed by SVGL, and it has been designed to attain sub-0.25-micrometers resolution over a 22 by 32.5 mm field. A range of 193-nm photoresist schemes has been demonstrated. They include semitransparent single-layer resists, positive-tone surface imaging (silylation), and negative-tone bilayers using ultrathin silicon-based polymers. In most instances we have demonstrated sub-0.25-micrometers resolution, high photosensitivity, good exposure-defocus latitude, and very low levels of etch residue. In sum, the first successful steps towards a fully engineered 193-nm photolithography have been taken, and no major obstacles are anticipated.