Diagnostics and Modeling of Laser-Assisted MOCVD Growth of Thin Films

摘要

The objective of this work has been to develop new optical techniques that can beused to study the laser assisted MOCVD growth of ZnSe thin films, and to characterize the high speed electronic properties of the epitaxial ZnSe material itself. Through the use of an ArF excimer laser at 193 nm, it is possible to photodissociate both precursors used for MOCVD growth of ZnSe, dimethylzinc (DMz) and diethylselenium (DES). This technique permits epitaxial growth at reduced substrate temperatures and with much better control. This in turn leads to significantly improved film quality. Through a better understanding of the growth process, as well as a more detailed knowledge of the electronic characteristics of the material which is produced, it will be possible to better optimize and control the fabrication of high quality ZnSe though laser assisted MOCVD techniques.