METHOD FOR FORMING THIN FILM BY SELECTIVE AREA MOCVD GROWTH

摘要

This invention relates to the selection growth by metal organic chemical vapor deposition method . ; the invention and the first mask pattern , the first in the group of the semiconductor material gas window edge having a first window of a predetermined width greater than the width of the selection area on the semiconductor substrate having a (001 ) crystal plane and forming a second mask pattern to have a second window disposed spaced apart from the first mask pattern and having the third window of width equal to the width of the selection areas intended for forming the blocking area to block the moving surface ; Characterized by including the step of growing a yirueojim semiconductor layer grown by metal organic chemical vapor deposition method over the second window , and the semiconductor substrate exposed by the third window .