Stain-Etched Porous Silicon Visible Light Emitting Diodes

摘要

Visible light emitting diodes are fabricated from p-type porous silicon (PoSi)thin films (2OO nm) using indium tin oxide (ITO)/PoSi n-p heterojunction structures. Uniform PoSi thin layers were produced by pure chemical etching (stain etching) of B-doped single crystalline Si in a HF:HNO3-based solution. Electroluminescence (EL), with a spectrum similar to that of the photoluminescence was observed from the diodes under forward bias only. The diodes show improved I-V characteristics with an ideality factor of 2.1. An EL onset bias as low as 3 mA/sq cm was measured. (MM).