Synthesis, Characterization and Immobilization of Nanocrystalline Binary andTernary III-V (13-15) Compound Semiconductors

摘要

Two synthetic routes to nanocrystalline III-V (13-15) materials are discussed.The first employs dehalosilylation reactions between Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents affording nanocrystalline III-V semiconductors or their precursors. The second involves reactions of MX3 (M = Ga, X = Cl, I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E = P, As, Sb) in aromatic solvents, yielding nanocrystalline GaP, GaAs, GaSb, InP, InAs and InSb after refluxing reaction mixtures. Materials are characterized by TEM, XRD, Elemental Analysis, NMR, UV-vis, and STM. STM images of InAs give particle size distributions and confirm sample conductivity. Scanning tunneling spectroscopy shows a larger bandgap for nanocrystalline InAs than for InAs wafers, consistent With quantum confinement. jg p3.