Lower Bandgap, Lower Resistivity, Silicon Carbide Heteroepitaxial Material, andMethod by Making Same

摘要

A silicon carbide semiconductor material, and method of making same, in which adoped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 12OO C or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.