Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same

摘要

A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200° C. or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.