8-13 Micrometers InAsSb Heterojunction Photodiode Operating at Near RoomTemperature

摘要

rho(-)InSb//Pi(-)InAs(1-x)Sbx/n(+) - InSb heterojunction photodiodes operating atnear room temperature in the 8-13 micron region of infrared spectrum are reported. A room temperature photovoltaic response of up to 13 microns has been observed at 300 K with an x =approx. O.85 sample. The voltage responsivity area product of 3 X lO(exp-5) V cm2/W has been obtained at 300 K for the lambda= 10.6 micron optimized device. This was close to the theoretical limit set by the Auger mechanism with a detectivity at room temperature of approx. 1.5 X 10(exp 8) cm sqrt-Hz/W.