Epitaxial Heusler alloy Fe3Si films on GaAs(001) substrates

摘要

We present results on fabrication, and structural and electrical properties of single-crystal Fe3Si/GaAs(001) heterostructures grown by molecular beam epitaxy. The exact stoichiometry of the Heusler alloy films can be achieved for almost lattice matched films. As evidenced by high-resolution X-ray diffraction, transmission electron microscopy, and resistivity measurements, we find an optimum growth temperature of T-G = 250 degrees C, to obtain ferromagnetic layers with high crystal and interface perfection as well as high degree of atomic ordering.. (c) 2006 Elsevier B.V. All rights reserved.