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Magnetic properties and spin polarization of Co_2MnSi Heusler alloy thin films epitaxially grown on GaAs(001)

机译:GaAs(001)外延生长的Co_2MnSi Heusler合金薄膜的磁性和自旋极化

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Single-crystalline Co_2MnSi Heusler alloy films have been grown on GaAs(001) substrates by pulsed laser deposition (PLD). The best crystallographic quality of the Co_2MnSi films has been achieved after deposition at 450 K. The films exhibit in-plane uniaxial magnetic anisotropy with the easy axis of magnetization along the [1-10] direction superimposed with a fourfold anisotropy with the easy axis along <110>. Spin-resolved pho-toemission measurements of the single-crystalline Co_2MnSi films reveal a spin-resolved density of states that is in qualitative agreement with recent band structure calculations. The spin polarization of photoelectrons close to the Fermi level is found to be at most 12%, in contrast to the predicted half-metallic behavior. We suggest that these discrepancies may be attributed to a partial chemical disorder in the Co_2MnSi lattice.
机译:单晶Co_2MnSi Heusler合金膜已通过脉冲激光沉积(PLD)在GaAs(001)衬底上生长。 Co_2MnSi薄膜在450 K下沉积后获得了最佳的晶体学质量。薄膜表现出面内单轴磁各向异性,其易磁化轴沿[1-10]方向叠加了四倍各向异性,易磁化轴沿[1-10]方向<110>。单晶Co_2MnSi薄膜的自旋分辨光发射测量表明,自旋分辨态的密度与最近的能带结构计算在质量上一致。与预测的半金属行为相反,发现接近费米能级的光电子的自旋极化至多为12%。我们建议这些差异可能归因于Co_2MnSi晶格中的部分化学无序。

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