Epitaxial growth of Heusler alloy Co_2MnSi thin films on Ge(001) substrates via a MgO interlayer

摘要

Spin transport in semiconductor channels has attracted much interest recently. The combination of a half-metallic Heusler alloy/MgO heterostructure and Ge channel featuring high mobility is promising for semiconductor spintronic devices. The purpose of this study has been to prepare epitaxial Heusler alloy Co_2MnSi films on Ge(001) substrates via an ultrathin MgO(001) interlayer.