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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >A structurally-controllable spin filter in a delta-doped magnetically modulated semiconductor nanostructure with zero average magnetic field
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A structurally-controllable spin filter in a delta-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

机译:具有零平均磁场的δ掺杂磁调制半导体纳米结构中的结构可控的自旋滤波器

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We report on a theoretical investigation of spin-polarized transport in a delta-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the delta-doping. Therefore, one can conveniently tailor the behaviour of the spin polarized electron by tuning the delta -doping, and such a device can be employed as a controllable spin filter for spintronics. (C) 2015 Elsevier B.V. All rights reserved.
机译:我们报告了对δ掺杂的磁调制半导体纳米结构中自旋极化输运的理论研究,该实验可以通过在半导体异质结构的顶部沉积铁磁条并使用原子层掺杂技术(例如分子束)通过实验实现外延(MBE)。结果表明,尽管这种纳米结构的平均磁场为零,但是由于塞曼分裂机理,存在相当大的自旋极化。还显示出,自旋极化程度随δ掺杂的重量和/或位置敏感地变化。因此,可以通过调节δ掺杂来方便地调整自旋极化电子的行为,并且这种装置可以用作自旋电子学的可控自旋滤波器。 (C)2015 Elsevier B.V.保留所有权利。

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