Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

摘要

GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8 <= V/IIIBEP <= 12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites. (c) 2006 Elsevier B.V. All rights reserved.