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Enhanced critical current density in the BSCCO single crystal grown by the traveling solvent floating zone method

机译:通过行进溶剂浮区法生长的BSCCO单晶中的临界电流密度提高

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摘要

We have successfully grown BSCCO single crystals showing high critical current density of 2 x 10(6) A/cm(2) at 20 K. Magneto-optical observation showed that the sample exhibited inhomogeneous penetration of magnetic flux correlated with the crystal b-axis. According to compositional analyses using wave-dispersive spectrometry (WDS), the crystals consisted of two phases, for which the Ca content was slightly different. It was also found that the values of the overall critical current density derived from the magnetization measurements depend on the portion of these two regions. Transmission electron microscopy revealed that strong pinning materials contain the region with a short incommensulate modulation period compared to the previously reported values, which might be responsible for extremely high J(c) values. (C) 2004 Published by Elsevier B.V.
机译:我们已经成功地生长了BSCCO单晶,该单晶在20 K时具有2 x 10(6)A / cm(2)的高临界电流密度。磁光观察表明,样品表现出与晶体b轴相关的磁通量不均匀渗透。根据使用波谱分析(WDS)的成分分析,晶体由两相组成,钙的含量略有不同。还发现从磁化测量得出的总体临界电流密度的值取决于这两个区域的部分。透射电子显微镜显示,与先前报道的值相比,强钉扎材料包含的区域具有较短的非共轭调制周期,这可能是导致极高的J(c)值的原因。 (C)2004由Elsevier B.V.发布

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