Growth and structure of Ce/Cu on GaAs(1 1 0) substrate by MBE method

摘要

Ce/Cu double layer was grown on GaAs by MBE method in ultrahigh vacuum. Epitaxial Cu (1 1 1) film was successfully grown on cleaved GaAs (1 1 0) substrate. The streaked RHEED pattern disappeared immediately after small amount of Ce deposition on Cu, but a different pattern from Cu turned up by the annealing. It is suggested from AFM and RHEED that some kind of Ce lattice including Ce-Cu compound was grown on Cu.