Optical properties of InAs quantum dots grown on InP (001) substrate by MOCVD

摘要

We report on the optical properties of InAs self-organized quantum dots formed in an InP matrix by low-pressure metal organic chemical vapour deposition (MOCVD) using TBAs and TBP as group-V sources. Strong photoluminescence located at wavelength similar to1.3 mum is observed at room temperature. The photoluminescence taken at low temperatures shows multiple peaks. Some of the peaks are attributed to emission from different low-dimensional structures. [References: 15]