Time-Resolved Photoluminescence Study of GaAs/Ordered GaInP Interface under High Pressure

摘要

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressure up to approx 5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of several hundred nanoseconds. In addition, unlike the emission from the GaAs well, a strong blue-shift of its peak energy with excitation intensity is observed. With increasing pressure, the emission peak shows a sublinear shift towards higher energy, while the GaAs quantum well exhibits a linear peak shift. The pressure dependence of the spectral peak position at higher excitation intensity tends to reflect that of the adjacent 1.49 eV emission band which has a faster decay profile. The pressure-dependent PL behavior at lower excitation intensity is rather similar to those observed for partially ordered GaInP alloys. These results suggest that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV and the deep emission is related to the transitions of electrons and holes localized at the GaAs/ordered GaInP heterointerface.