Pressure dependence of photoluminescence in GaAs/ordered GaInP interface

摘要

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressures up to /spl sim/5 GPa to investigate the characteristics of the 1.46 eV deep emission band. It has a very long decay time (at least 200-300 ns). In addition, its spectral position is found to be very sensitive to the excitation intensity. With increasing pressure, the PL peak shifts towards higher energies at a rate slightly smaller than that of the 1.52 eV band from the GaAs well. The PL behavior observed at high pressures is rather similar to those observed for the PL peak energy of partially ordered GaInP alloys. This would imply that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV. We attribute the 1.46 eV deep emission to the interface transitions of electrons and holes localized at the heterointerface.