Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface

摘要

The anomalous temperature dependence of anti-Stokes photoluminescence (ASPL) at the GaInP2/GaAs interface was studied. A localized state luminescence model was employed to interpret the temperature-dependence of the peak position of the ASPL. The results show that the localization of the up-converted carriers plays an important role in radiative recombination producing the ASPL. The studies also show that the microscopic mechanism of thermal quenching of ASPL at GaInP2/GaAs interface is unmasked.