Calculated Critical Energies E_1 and E_1+#DELTA#_1 for Strained Group IV Elements and III-V Compounds

摘要

The behavior of critical energies E_0, E_1 and E_1+#DELTA#_1 for strained Si, Ge, GaAs and InP is studied using an empirical tight-binding method, with an orthogonal sp~3 set of orbitals in the three-center representation. Spin-orbit coupling is taken into account for all four materials. The deformation potentials for the E_1 and E_1+#DELTA#_1 transitions, for uniaxial strain along the [001] and [111] directions, are evaluated and compared with experimental results.